P365 – 17″ HV E-Beam deposition TopTec
Application
HV E-Beam deposition system for thin film and multilayer deposition at 17″ substrates
Year of delivery
2013
Installation site
TopTec, Turnov, Czech Republic
Design Features
- HV E-Beam deposition system in combination with ion beam assisted deposition and thermal evaporation sources.
- Two multi pocket e-beam sources.
- Motorized pocket exchange for automatic deposition processes.
- Pneumatic source shutter to avoid deposition during material heat up time.
- Thickness controller incl. rate regulation and end point detection.
- Thickness sensor with temperature observation for improved reproducibility.
- Two thermal evaporation sources.
- Pneumatic source shutter to avoid deposition during material heat up time.
- Sample manipulator with motorized sample rotation and maximal sample temperature above 300°C.
- Ion source for sample precleaning, mild etching, plasma treatment and ion beam assisted deposition (IBAD).
Special Features
- System integration in clean room wall (door and user interface is in clean room; rest of the sytem is in gray room).
- Sample manipulator can be equipped with at least two different stage heads.
- Stage head 1 for one samples with diameter of max. 450mm (max. 25kg).
- Stage head 2 for three samples with diameter of max. 200mm diameter.
Outer Dimensions
Technical specifications and performance values
General
E-Beam chamber
Size
About 750 mm width, about 900 mm depth, about 900 mm height (D-shape chamber with door)
Material
stainless steel
Vacuum
E-Beam chamber
Base pressure
< 2 *10-7 mbar
Pump down time
4.5 hours to < 5 *10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
E-Beam chamber
Sample size
Sample stage head 1: diameter max. 450 mm substrate (max. 25kg)
Sample stage head 2: three samples with diameter max. 200 mm substrate
Motion axes
Sample stage head 1: motorized (continous) sample stage rotation
Sample stage head 2: motorized (continous) sample stage rotation incl. planetary rotation at each sample
Temperatures
Room temperature (not stabilized) up to 300°C at sample
Sample preparation features
E-Beam chamber
Plasma treatment
Up to 5E-4 mbar partly ionised argon gas (using a griddless ion gun)
Ion beam etching /
sample precleaning
Wide range variation of ion energy and ion beam current
Performance test results
Chamber pump down
Long time sample heating
