P382 – 4″ UHV Ion beam sputter deposition system CEITEC
Application
UHV ion beam sputter deposition system for thin film and multilayer deposition at 4″ substrates
Year of delivery
2014
Installation site
CEITEC, Brno, Czech republic
Design Features
- UHV ion beam sputter deposition system in combination with ion beam assisted deposition.
- Two 40mm RF ICP ion sources.
- One source is oriented towards a target manipulator with six 100 mm x 100 mm targets.
- One source oriented towards the sample for precleaning and ion beam assited deposition.
- Both sources are oxygen compatible.
- Sample manipulator with integrated sample shutter, motorized sample rotation and maximal temperature of about 600°C.
- Load lock chamber with manual transfer system.
- Integrated bake out system.
Special Features
- Use of sample holders with integrated sample tilting is possible.
- Different sample sizes from 4″ wafer down to 1″ wafer samples can be handled (using different kind of sample adapters and sample holders).
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
400 mm diameter, about 800 mm height
Material
stainless steel
Load lock chamber
Size
150 mm diameter, about 160 mm height
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 10-8 mbar
Pump down time
1.75 hours to < 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Bake out
< 120°C
Load lock chamber
Base pressure
< 2 * 10-7 mbar
Pump down time
1 hour to < 5 * 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 4″ substrate
Motion axes
Motorized sample rotation axis (continous rotation possible)
Sample shutter (part of the manipulator head, pneumatically driven)
Temperatures
Room temperature (not stabilized) up to 600°C at sample
Special features
Use of sample holders with tiltable samples
Sample preparation features
Sputtering chamber
Ion beam etching /
sample precleaning
Wide range of ion energy and ion beam current (using a gridded RF ICP ion gun)
Oxydation /
Plasma treatment
max. 10-3 mbar partly ionised oxygen + argon gas mixture (using a gridded RF ICP ion gun)
Performance test results
Chamber pump down
Long time sample heating
