P466 – 4″ UHV sputter deposition system CU Prague
Application
UHV sputter deposition system for thin film and multilayer deposition at 4″ substrate
Year of delivery
2018
Installation site
Charles university, Prague, Czech Republic
Design Features
- UHV magnetron sputter deposition system in confocal sputter up configuration.
- Up to nine 2″ magnetrons.
- All magnetrons with manual in situ tilting.
- All magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
- Low pressure and low power sputtering possible.
- RF – DC switching unit installed.
- High power impulse magnetron sputtering (HiPIMS) possible.
- Fully motorized 2 axes sample manipulator with integrated sample shutter, DC Bias potential option and maximal sample temperature well above 800°C.
- Ion source for sample precleaning, mild etching and ion beam assisted deposition processes.
- Moveable thickness monitor for sputter rate measurement before starting a deposition process.
- Integrated bake out system.
- Load lock chamber including sample preparation stage.
- Dosing gas inlet valve for oxydation or nitration.
- Lamp heating stage for thermal treatment or themal sample precleaning.
Special Features
- Face to face sputtering possible by using sample holders with tilted samples.
- System is prepared to be added to a cluster tool via second transfer port at sputtering chamber.
- System is prepared for ion beam assisted deposition as well.
- Different sample sizes from 4″ wafer down to 10mm x 10mm samples can be handled (using different kind of sample adapters).
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
700 mm diameter, about 850 mm height
Material
stainless steel
Load lock chamber
Size
200 mm diameter, about 300 mm height
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 3 * 10-9 mbar
Pump down time
6.5 hours to < 5 * 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber lid differentially pumped by dry foreline pump
Bake out
< 150°C
Load lock chamber
Base pressure
< 10-7 mbar
Pump down time
2.5 hours to < 5 * 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 4″ substrate
Motion axes
2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)
Pneumatic sample shutter (part of the manipulator head)
Temperatures
Room temperature (not stabilized) up to 850°C at sample
Special features
Sample bias (RF, DC or pulsed DC) is possible
Sample preparation features
Sputtering chamber
Oxydation / Nitration /
Plasma treatment
max. 5 * 10-4 mbar partly ionised gas mixture (using a griddless ion gun)
Gas mixture variable from pure argon up to pure oxygen or nitrogen
Ion beam etching /
sample precleaning
Variable ion source to sample distance
Wide range variable ion energy and ion beam current
Load lock chamber
Oxydation / Nitration
max. 10-2 mbar neutral oxygen / nitrogen gas (using a manual gas dosing valve)
Thermal treatment
max. 450°C at sample (no temperature regulation)
Performance test results
Chamber pump down
Long time sample heating
